%0 Journal Article
%T Numerical Simulation for Enhancing Performance of MoS<sub>2</sub> Hetero-Junction Solar Cell Employing Cu<sub>2</sub>O as Hole Transport Layer
%A Md. Ferdous Wahid
%A Ushna Das
%A Bidesh Kumer Paul
%A Shuvo Paul
%A Md. Nuralam Howlader
%A Md. Sazedur Rahman
%J Materials Sciences and Applications
%P 458-472
%@ 2153-1188
%D 2023
%I Scientific Research Publishing
%R 10.4236/msa.2023.149030
%X The paper reported the design and thorough analysis of a thin-film solar cell (TFSC) based on molybdenum disulfide (MoS<sub>2</sub>) with an integrated Copper(I) Oxide (Cu<sub>2</sub>O) hole transport layer (HTL), employing the one-dimensional Solar Cell Capacitance Simulator (SCAPS-1D) software. By varying crucial parameters such as absorber layer thickness, doping density, and bulk defect density, as well as HTL thickness, doping concentration, and electron affinity, defect density at ZnO/absorber and absorber/Cu<sub>2</sub>O interfaces, and operating temperature, we explored key photovoltaic measures including open circuit voltage (Voc), short-circuit current density (Jsc), fill-factor (FF), and power conversion efficiency (PCE) of the hetero-junction solar cell. The study demonstrated an efficiency of 18.87% for the MoS<sub>2</sub> solar cell without HTL, while the proposed solar cell (SC) utilizing Cu<sub>2</sub>O HTL and optimized device structure exhibited a remarkable PCE of 26.70%. The outcomes derived from the present study offer valuable insights for the progress of a highly efficient and economically viable MoS<sub>2</sub> hetero-junction TFSC.
%K Solar Cell
%K Thin Film
%K SCAPS-1D
%K Hetero-Junction
%K HTL
%K Defect Density
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=127517