%0 Journal Article
%T Ce掺杂的In<sub>2</sub>O<sub>3</sub>立方体的制备及气敏性能研究<br>Study on the Preparation and Gas-Sensing Performance of Ce-Doped In<sub>2</sub>O<sub>3</sub> Cubes
%A 马克凡
%J Journal of Sensor Technology and Application
%P 486-494
%@ 2331-0243
%D 2024
%I Hans Publishing
%R 10.12677/jsta.2024.123053
%X 挥发性有机化合物(VOCs)，诸如丙酮、苯、甲醛，现已成为空气污染物的主要源头。这些化合物多数具有显著的毒性，对人体健康构成威胁。金属氧化物半导体(MOS)作为各种气体传感器应用的传感材料受到了极大的关注，它具有结构简单、价格低廉、易于集成、对易燃和易燃气体响应快速等优点。实验中我们采用水热法制备了纯净的In<sub>2</sub>O<sub>3</sub>立方体纳米材料。随后，通过引入稀土元素Ce进行掺杂，显著提升了该材料的传感性能。为了深入理解材料性能提升的内在机制，我们借助XRD、SEM、XPS等多种手段对材料的结构和形貌进行了详细表征。本文通过稀土元素掺杂以及精细调控金属氧化物的形貌结构，优化了气体传感器的性能。我们尤其提升了传感器的响应灵敏度，缩短其响应与恢复时间，并显著降低其工作温度，实现了更高效、更稳定的气体检测。<br />
Volatile organic compounds (VOCs), including acetone, benzene, toluene, formaldehyde, and aromatic compounds, have emerged as major sources of air pollution. These pollutants primarily originate from industrial emissions, vehicle exhaust, the release of household building materials, and painting activities. Metal oxide semiconductors (MOS) have received significant attention as sensing materials for various gas sensor applications due to their simple structure, low cost, ease of integration, and rapid response to flammable and explosive gases. In this study, we employed the hydrothermal method to prepare pure In<sub>2</sub>O<sub>3</sub> cubic nanomaterials. Subsequently, the sensing performance of these materials was significantly improved through the doping of rare earth element Ce. To gain a deeper understanding of the underlying mechanisms of performance enhancement, we utilized various techniques such as XRD, SEM, and XPS to characterize the structure and morphology of the materials in detail. By doping rare earth elements and finely controlling the morphology and structure of metal oxides, we optimized the performance of gas sensors. Specifically, we focused on enhancing the response sensitivity of the sensors, reducing their response and recovery times, and significantly lowering their operating temperatures, thus achieving more efficient and stable gas detection.
%K 金属氧化物半导体，气体传感器，丙酮，In<sub>2</sub>O<sub>3</sub>，金属掺杂<br>Metal Oxide Semiconductors
%K Gas Sensors
%K Acetone
%K In<sub>2</sub>O<sub>3</sub>
%K Metal Doping
%U http://www.hanspub.org/journal/PaperInformation.aspx?PaperID=87973