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Tekhnologiya i Konstruirovanie v Elektronnoi Apparature

ISSN Print: 2225-5818

ISSN Online:

主页: http://www.tkea.com.ua/english/tkea/magazin.html

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Photoelectric properties of n-SiC/n-Si heterojunctions

Semenov A. V.,Kozlovskii A. A.,Puzikov V. M.

The deposition of silicon nitride films under low pressure on wafers up to 200 mm

Nalivaiko O. Yu.,Turtsevich A. S.

Synchronization of data flows in multichannel systems of digital signals processing with configurable structure

Sheik-Seikin A. N.

Improving the reliability of Schottky diodes under the influence of electrostatic discharges

Sоlоdukha V. A.,Turtsevich A. S.,Solov’yov J. A.,Rubtsevich I. I.

Si1–xGex nanocrystals as sensitive elements for magnetic field and temperature sensors

Druzhinin А. A.,Ostrovskii ？. P.,Khoverko Yu. М.,Nichkalo S. ？.

Temperature fields in a growing solar silicon crystal

Kondrik A. I.,Datsenko O. A.,Kovtun G. P.

Optimization of structure of multicell-type transistor converter

Bondarenko Yu. V.,Bondarenko A. F.,Safronov P. S.,Sydorets V. N.

Wide-band chalcogenide scintillators on the basis of AIIBVI compounds

Starzhinskiy N. G.,Grinyov B. V.,Ryzhikov V. D.,Maliykin Yu. V.

Photoluminescent method for studying the plastic deformation at the boudary of SiO2—Si

Kulinich O. A.,Yatsunskiy I. P.,Eshtokina T. Yu.,Brusenskaya G. I.

The nature of transitions and generation mechanisms in optically homogeneous CdS crystals

Garkavenko A. S.

Boiling heat transfer intensity on small-size surface

Alekseik O. S.,Kravets V. Yu.,Kopchevskaya I. A.

Artificial intelligence system for technical diagnostics of photomasks

Kozina Yu. Yu.,Kozin A. A.

Non-inductive generator of chaotic oscillations of Chua circuit

Eliyashiv O. M.,Politanskii L. F.

Investigation of pulsed voltage limiters characteristics

Karimov A. V.,Yodgorova D. M.,Rakhmatov A. Z.,Skornyakov S. L.

Designing of digital FIR-filters with independently controlled phase-frequency characteristic

Ivanov V. V.,Shakurskiy V. K.,Shakurskiy M. V.

Computer processing of the images obtained by a sensor based on the CdS—Cu2S heterojunction

Borschak V. A.

Characteristics of photodiodes with intrinsic oxide — InSe structure, irradiated with high-energy electrons

Sydor O. N.,Sydor О. А.,Kovalyuk Z. D.,Dubinko V. I.

Formal indicators to assess the quality of radio systems perimeter security facilities

Kolesnik K. V.,Kipenskii A. V.,Machekhin Yu. P.,Churyumov G. I.

Determination of radiation resistance of integrated circuits with the use of low-energy X-radiation

Perevertailo V. L.

Сonnecting MEMS device for BGA components functional testing

Nevlyudov I. Sh.,Martynyak R. M.,Palagin V. A.,Slobodyan B. S.

Mass transfer in liquid-phase epitaxy of two-layer systems

Dranchuk S. M.,Zavadzkii V. A.,Mokritskii V. A.

Сontrollability range of dielectric inhomogeneity located between the metal planes

Prokopenko Yu. V.

Application of wireless monitoring and communication systems in the power engineering

Grechikhin V. A.,Zamolodchikov V. N.,Smolskiy S. M.

Impedance analyzer for trademarks of aqueous-alcoholic drinks identification

Kukla A. L.,Pavlyuchenko A. S.,Maistrenko A. S.,Mamykin A. V.

Nanocomposites based on opal matrices with crystalline multiferroics of ferrothorite type

Samoylovich M. I.,Rinkevich A. B.,Bovtun V.,Belyanin А. F.

Properties of double p+-InP/n-InGaAsP/n-InP heterojunctions obtained by LPE method

Vakiv N. M.,Krukovskii S. I.,Sukach A. V.,Tetyorkin V. V.

Method for evaluating the quality of thin-film board

Spirin V. G.

Effect of annealing temperature on the value of contact resistance of ohmic contacts to InP

Novitskyi S.V.

Unified generator system

Basyuk O. P.

Heterojunctions formed by annealing of GaSe and InSe layered crystals in zinc vapor

Kudrynskyi Z. R.,Kovalyuk Z. D.

Technology for boron-doped layers formation on the diamond

Zyablyuk K. N.,Mityagin A. Yu.,Talipov N. H.,Chucheva G. V.

Chargеs collection efficiency in gamma-ray detectors with different electrodes configuration

Kondrik A. I.

Real and limit sensitivity of some radiation detectors of THz/sub-THz ranges

Shevchik-Shekera A. V.

Electrical connectors for surface solderless mounting

Yefimenko A. A.

Chaotic masking of information signals using generator based on the Liu system

Ivanyuk P. V.,Politansky L. F.,Politansky R. L.

Thermal mathematical model of semiconductor devices for measurement of current-voltage characteristics by pulse method

Yermolenko Ye. O.,Bondarenko O. F.,Baranov O. M.

Global trends in microelectronics and place of Belarus in this process

Belous A. I.,Pilipenko V. A.,Turtsevich A. S.,Shvedov S. V.

Multilayer circuits with thick-film polymer insulation

Spirin V. G.

Passive evaporation-condensation system for laser cooling

Gershuni A. N.,Nishchik A. P.

The mechanism of formation of the interlayer quantum wires in zinc-doped Bi2Te3

Alieva A. P.,Aleskerov F. K.,Kakhramanov S. Sh.,Nasibova S. A.

Visual and opto-electronic autocollimator

Fesenko A .V.,Borovitskii V. N.

Dielectric loss prediction in glass-ceramics for different correlation of mass shares of components

Dmitriev M. V.,Yerimichoy I. N.,Panov L. I.

Photodiode based on GaP sensitized to short-wave region of UV spectrum

Dobrovol’skii Yu. G.

The suppression of synchronous interference NQR with Zeeman modulation

Politanskii L. F.,Samila A. P.,Khandozhko V. А.

Powerful infrared emitting diodes

Kogan L. M.

Performance improvement of silicon solar cells by nanoporous silicon coating

Dzhafarov T. D.,Aslanov S. S.,Ragimov S. H.,Sadigov M. S.

The influence of silicon wafer thickness on characteristics of multijunction solar cells with vertical p—n-junctions

Gnilenko A. B.,Dzenzerskii V. A.,Plaksin S. V.,Pogorelaya L. M.

Effect of thickness and temperature of copper phthalocyanine films on their properties

Alieva Kh. S.

LED electric-measuring indicators for multithreshold comparators

Oborskii G. A.,Koval’kov V. I.,Tikhenko V. N.,Slobodyanik P. T.

Implementation features of the microstrip filters with traveling wave ring resonators

Glushechenko E. N.

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