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ISSN: 2333-9721
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International Journal of Nano Devices, Sensors and Systems

ISSN Print: 2089-4848

ISSN Online:

主页: http://www.iaesjournal.com/online/index.php/IJ-Nano

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Spacer Optimization and Accurate Small-Signal Modeling of 90nm Gate Underlap SOI-MOSFETs for Low Power GHz Applications

Indra Vijay Singh

Synthesis of high yield and cost effective Carbon Nanotubes by Arc Evaporation Method and their Characterization

Rohit Saraf

Realization of Metamaterial Zeroth-Order Resonators Based on MIM Capacitor

Mohamed M Mansour,El-Sayed M El-Rabaie,Abdel-Aziz T Shalaby,Mostafa A Elmala

Degeneracy Effect on Carrier transport in Bilayer Graphene Nanoribbon

Mohammad Javad Kiani,Muhammad Taghi Ahmadi,Meisam Rahmani,F. K Che Harun

Device and Circuit Performance Evaluation of Extended Channel SiGe Double Gate Tunnel FETs

Bahniman Ghosh,Rahul Mishra,Mohammad Waseem Akram

Comparative analysis of traditional and modern controller for piezoelectric actuated nanopositioner

Sheilza Aggarwal,Maneesha Garg,Akhilesh Swarup

Monte Carlo Simulation of Single Electronics Based on Orthodox Theory

Ali A Elabd,Abdel-Aziz T Shalaby,El-Sayed M El-Rabaie

High Sensitivity Of Tin Oxide Sensor by Sol-Gel Method

Mohammad Javad Kiani

Einstein Relation of Two Dimensional Strained Si/Si1-x Gex MOSFETs in Nondegenerate Regime and Degenerate Regime

Eng Siew Kang,Fatimah Abdul Hamid,Razali Ismail

Design and construction of optical fiber sensor system for detection of stress and fine motion

Bushra R Mhdi,Nahla A Aljaber,Suad M Aljwas,Abeer H Khalid

Design of Double Gate Vertical MOSFET using Silicon On Insulator (SOI) Technology

Jatmiko E Suseno,Razali Ismail

Nonlinear Simulation Methods for Active Microwave Circuits: A Review of the Art and Novel Trends

El-Sayed M El-Rabaie

Low Cost Signal Conditioning Technique for RTD Measurement.

Haresh A. Suthar,Jagrut J Gadit

Performances Comparison of Si, GaAs and GaN based Resonant Tunneling Diode in Presence and Absence of Electric Field

Subhra Chowdhury,Dhrubes Biswas

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