This paper presents the results of a stability study of a photodiode realized in the Laboratoire de Métrologie des Rayonnements (LMR-INSAT, Tunisia). The study was performed during six years and concerned with the photodiode optical and electrical characteristics. This study involves in one side, the reflectivity stability for different wavelengths and in the other side, the stability of the series and shunt resistances. The experimental results confirm the stability of the photodiode spectral response since the reflection coefficient maximum uncertainty is equal to 0.0055 with an experimental uncertainty of about 0.0016 (at 1? level) for the mean value of the reflectivity over the study duration. Moreover, the shunt and series resistances are equal to 5.14 k? and 7.61 ? respectively with an uncertainty value of 0.01 k? and 0.04 ? respectively (at 1? level). This photodiode does not display any ageing aspect. Consequently, the PSiZ photodiode can be used as a Transfer Standard for radiometric measurement in the visible spectral range.
References
[1]
O. Touayar, B. Rougié, J.-M. Coutin and J. Bastié, “Mea- surement of the Reflectance of the INM Cryogenic Radiometer Cavity at Several Wavelengths,” Metrologia, Vol. 35, No. 4, 1998, p. 387.
doi:10.1088/0026-1394/35/4/28
[2]
T. Saito, et al., “Group III-Nitride Semiconductor Schot- tky Barrier Photodiodes for Radiometric Use in the UV and VUV Regions,” Metrologia, Vol. 46, No. 4, 2009, p. 272. doi:10.1088/0026-1394/46/4/S26
[3]
M. Richter, et al., “The PTB High-Accuracy Spectral Re- sponsitivity Scale in the Ultraviolet,” Metrologia, Vol. 37, No. 5, 2000, p. 515. doi:10.1088/0026-1394/37/5/37
[4]
L. Shi, et al., “Optical Stability Investigation of High- Performance Silicon-Based VUV Photodiodes,” 2010.
http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=5690669&url=http%3A%2F%2Fieeexplore.ieee.org%2Fiel5%2F5678851%2F5689839%2F05690669.pdf%3Farnumber%3D5690669
[5]
Z. Ben Achour, O. Touayar, E. Akkari, J. Bastié, B. Bessais and J. Ben Brahim, “Study and Realization of a Transfer Detector Based on Porous Silicon for Radio- metric Measurements,” Nuclear Instrumentation and Me- thods in Physics Research A, Vol. 579, No. 3, 2007, pp. 1117-1121. doi:10.1016/j.nima.2006.12.035
[6]
I. Mellouki, O. Touayar, T. Ktari, F. Saadallah, J. Bastié and N. Yacoubi, “Study and Realization of a Trap Py- roelectric Detector for Absolute High Radiant Powers and Energies,” Measurement Science and Technology, Vol. 15, No. 2, 2004, p. 384. doi:10.1088/0957-0233/15/2/011
[7]
W. R. Blevin and J. Geist, “Influence of Black Coating of Pyroelectric Detectors,” Applied Optics, Vol. 13, No. 5, 1974, pp. 1171-1178. doi:10.1364/AO.13.001171
[8]
J. Bastié, B. Andasse, B. Mercier and O. Touayar, “The Calibration of Germanium Photodetectors Used for the Measurements in the Field of Optical Fiber Telecommunication,” Proceedings of the SPIE 14th Symposium on Photonic Measurements, Sopron, 1 June 1992, p. 1712.
[9]
J. Lehman, E. Theocharous, G. Eppeldauer and C. Pannell, “Gold Black Coatings for Freestanding Pyroelectric De- tectors,” Measurement Science and Technology, Vol. 14, No. 7, 2003, pp. 916-922.
doi:10.1088/0957-0233/14/7/304
[10]
I. Mellouki, O. Touayar, T. Ktari and N. Yacoubi, “Depo- sition and Characterization of Graphite-Black Coating for Absolute Pyroelectric Detectors,” Infrared physics and technology, Vol. 45, No. 4, 2004, pp. 273-279.
doi:10.1016/j.infrared.2003.11.010
[11]
J.-F. Power and A. Mandelis, “Photopyroelectric Thin- Film Instrumentation and Impulse Response Detector Part I. A Theoretical Model,” Review of Scientific Instruments, Vol. 58, No. 11, 1987, pp. 2018-2023.
doi:10.1063/1.1139509
