Estudio del mecanismo de transporte en películas de silicio poroso

the transport mechanisms in porous silicon layer (psl) were identified by current-voltage (i-v) measurements. the psl was made by anodic etching of p-type crystalline (100) si wafers and resistivity of 1-5 ω-cm. the electrical resistivity measured of the psl was of 4.48 x 109 ω-cm. the carrier transport in the psl is space charge limited (scl) due to the trapped charge in the different defect states. furthermore, it was found that in accordance with the bias mode and the magnitude of the applied bias to the structure, the change in the charge state of the deep defect centers cause changes in the trap density, nt.