Electrical, optical and morphological properties of chemically deposited nanostructured tungsten disulfide thin films

Nanocrystalline tungsten disulfide thin films have been deposited on non-conducting glass substrates using triethanolamine bath. The film samples were characterized by X-ray diffraction, scanning electron microscopy, optical spectroscopy and thermoelectric techniques. The crystalline phase of the deposited sample was of hexagonal wurtzite-type. The optical band gap energy of the sample was found to be 1.46 eV. The electrical conductivity of the film sample was found to be in the order of 10 3 (Ω cm) 1. Thermoelectric measurement showed n-type of conductivity. The configuration of fabricated cell is n-WS2 | NaI (2 M) + I2 (1 M) | C(graphite). The efficiency of the cell was found to be 1.29%.