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Some Aspects of Quantitative Analysis of Ternary Alloys of Group III-Nitrides by Auger Electron Spectroscopy

DOI: 10.2478/v10187-011-0059-2

Keywords: GaN, AlN, AlxGa1 - xN, AES relative elemental sensitivity factors, component sputtering yields

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Abstract:

In this work, the quantities have been determined experimentally that are needed for reliable and precise quantitative interpretation of Auger spectra of nitrides AlN, GaN and of their ternary alloys AlxGa1 - xN. Measurements of reference samples AlN and GaN under various parameters of the primary electron beam (energy 3 and 5 keV, beam incidence angle with respect to the surface normal 12.5° and 45°) and of the ion beam (energy 0.5 and 1.0 keV, beam incidence angle with respect to the surface normal 67.5° and 35°) allowed to find the elemental sensitivity factors for these nitrides, and measurements on reference samples of ternary alloys AlxGa1 - xN allowed to find the component sputtering yields YGa/YAl. To the best of our knowledge there is a lack of such data for those materials in the literature.

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