Ohmic Contacts to P-Type Doped ZnO

For the purpose of enhance the ohmic contacts, we have utilizing Pt to act as ohmic contacts on p-type phosphorus doped ZnO (ZnO:P) by a metal with high work function. The Pt ohmic contacts in terms of electrical property and thermal stability were reported in this paper. The ZnO films doped with 3 wt. % phosphorus (P) were produced by activating phosphorus doped ZnO (ZnO:P) thin films in air ambient at 300℃, 400℃, 500℃, and 600℃ for 60 min without any catalyst. The activation energies of the phosphorus dopant in the p-type ZnO under air environment show that phosphorus replacement on the O-site compliance a deep level in the gap.