Ultra High Speed Semiconductor Electrooptic Modulator Devices for Gigahertz Operation in Optical Communication Systems

The effects of electrodes geometry and temperature on high frequency radio frequency transmission characteristics are deeply investigated against semiconductor material based electro optic modulator devices such as aluminum gallium arsenide (AlGaAs) and optical waveguide parameters. On the other hand, we have developed the optimization of the electro-optic modulator parameters where the effective index plays an essential role in the evaluation of the bandwidth structure. Therefore, a theoretical analysis of the capacitance, the characteristic impedance and the effective index determine how to increase the bandwidth. The effects of design parameters on the modulating voltage and optical bandwidth are also investigated for different materials based electro-optic modulators by using rigorous transmission modeling techniques. The low-loss wide-bandwidth capability of optoelectronic systems makes them attractive for the transmission and processing of microwave signals, while the development of high capacity optical communication systems has required the use of microwave techniques in optical transmitters and receivers. These two strands have led to the development of the research area of microwave photonics.