A Study of Dynamic Characterizations of GaAs/AlGaAs Self-Assembled Quantum Dot Lasers

In this research, we have solved the rate equations for GaAs/AlGaAs self-assembled quantum dot laser with considering the homogeneous and inhomogeneous broadening of the optical gain using 4th order Runge-Kutta method. With increasing the Full Width at Half Maximum (FWHM) of homogeneous broadening, the threshold current, turn-on delay and steady-state photons increase because of increasing the density of states in the central group. The calculation results show also that the simulated self-assembled dot laser reaches the steady-state faster and the lasing emission is not single mode due to the gain saturation.