Fabrication and characterization of a GaN/(4H)SiC vertical pn power diode using direct and interfaced epitaxial-growth approaches
Fabrication and Characterization of GaN/(4H)SiC Vertical PN Power Diode using Direct and Interfaced Epitaxial-Growth Approaches

We report the fabrication and characterization of a vertical pn power diode which is realized using two separate epitaxial-growth mechanisms: (a) p-GaN over p-(4H)SiC, and (b) p-GaN over n-(4H)SiC with AlN as the interface layer. In all of the cases, n+-doped (4H)SiC serves as the cathode substrate. Pd(200 )/Au(10000 ) is used for the anode contact while Ni(1000 ) is used for the bottom cathode contact. The measured forward drop of the pn diode with AlN as the interface material is found to be around 5.1 V; whereas, it is 3 V for the other sample structure. The measured reverse-blocking voltage is found to be greater than 200 V.