Performance Analysis of FinFET Device at 60nm

A Double Gate (DG) FinFET device with High K dielectric in 60nm is presented which provides high performance compared to normal MOSFET device in terms of reduction of leakage current. A less leakage current is reported with High-K FinFET device when HfO2 used as High-k material with a dielectric constant of 25. Sentaurus TCAD tool is used to find the performance of the FinFET device