A 52nW, 18ppm/°C, Voltage Reference Circuit using BJTs and Subthreshold Mosfet

A voltage reference circuit which utilizes a pair of BJTs and a MOSFET operating in subthreshold mode is designed in 0.13um CMOS 1P6M process. The proportional to temperature (PTAT) signal is derived using a pair of BJTs, while complementary to temperature (CTAT) signal is realized as gate to source voltage of subthreshold MOSFET. It requires smaller silicon area and is less sensitive to mismatches compared to the conventional bandgap generation circuit. The reference circuit works well from 1.3V to 3.6V. It has temperature stability 18ppm/°C for reference voltage of 1.0V in the temperature range of -40°C to 85°C and it consumes 52nW power.