Comparison of Steady State Electron Transport Properties in Binary Nitride Materials Using Three Valley Monte Carlo Model

An ensemble Monte Carlo simulation is used to compare high field electron transport in bulk GaN, AlN and InN. For all materials we found that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field .This critical field is strongly dependent on the material parameters. For example about 0.74×107 Vm-1 for the case of InN, 2.79×107 Vm-1 for AlN and 1.74×107 Vm-1 for GaN. At higher electric fields the drift velocity decreases eventually saturating at around 2.03×105 ms-1 for both GaN and AlN and 1.8×105 ms-1 for InN.