Properties of double p+-InP/n-InGaAsP/n-InP heterojunctions obtained by LPE method

The double epitaxial p+-InP/n-InGaAsP/n-InP heterostructures with coinciding electrical and metallurgical boundaries has been obtained. Such coincidence is achieved due to growing an additional buffer n-InP layer and decreasing the time for growing an emitter p+-InP layer heavily doped by zinc. Electroluminescence spectra of such structures have a smaller half-width and the infrared radiation of higher power than the structures in which the p–n-junction is formed in the InGaAsP layer. These heterostructures are designed to create efficient IR LEDs with wavelength of 1,06 mm in spectrum maximum.