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The mechanism of formation of the interlayer quantum wires in zinc-doped Bi2Te3Keywords: quantum dots , nanowires , migration of atoms , morphology , topological insulators , clusters , diffusion , aggregation Abstract: Nanowires formation process on a (0001) surface of Bi2Te3 is studied. It has been established that on interlayer surface Te(1)—Te(1) there is a process of migration of atoms, moving and coagulation of clusters on the basis of Zn atoms. As a result of diffusion-limited aggregation the structures with quantum dots are formed, from which nanowires are self-organized. Such superficial structures play regulating role in working out the topological insulators based on A2VB3VI and increase thermoelectric efficiency of a composite.
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