Characteristics of photodiodes with intrinsic oxide — InSe structure, irradiated with high-energy electrons

The article describes the research of the influence of electrons with an effective energy of 12 MeV in the 0,33—33 Mrad dose range on the electrical and photovoltaic properties of photodiodes with intrinsic oxide — p-InSe structure. It has been found that the minimum dose improves their basic parameters, while the maximum dose significantly reduces the short circuit current and devices photosensitivity. In this case, an increase in volt-watt sensitivity and a minimal increase in coupling coefficient of the I-V characteristic are observed.