Memory Characteristics of Pt Nanoparticle-embedded MOS Capacitors Fabricated at Room Temperature

In this study, we fabricate Pt nanoparticle (NP)-embedded MOS capacitors at room temperature and investigate theirmemory characteristics. The Pt NPs are separated from each other and situated between the tunnel and control oxidelayers. The average size and density of the Pt NPs are 4 nm and 3.2×1012 cm-2, respectively. Counterclockwise hysteresiswith a width of 3.3 V is observed in the high-frequency capacitance-voltage curve of the Pt NP-embedded MOScapacitor. Moreover, more than 93% of the charge remains even after 104 s.