Effect of Oxygen and Diborane Gas Ratio on P-type Amorphous Silicon Oxide films and Its Application to Amorphous Silicon Solar Cells

We reported diborane (B2H6) doped wide bandgap hydrogenated amorphous silicon oxide (p-type a-SiOx:H) filmsprepared by using silane (SiH4) hydrogen (H2) and nitrous oxide (N2O) in a radio frequency (RF) plasma enhancedchemical vapor deposition (PECVD) system. We improved the Eopt and conductivity of p-type a-SiOx:H films withvarious N2O and B2H6 ratios and applied those films in regards to the a-Si thin film solar cells. For the single layerp-type a-SiOx:H films, we achieved an optical band gap energy (Eopt) of 1.91 and 1.99 eV, electrical conductivity ofapproximately 10-7 S/cm and activation energy (Ea) of 0.57 to 0.52 eV with various N2O and B2H6 ratios. We appliedthose films for the a-Si thin film solar cell and the current-voltage characteristics are as given as: Voc = 853 and842 mV, Jsc = 13.87 and 15.13 mA/cm2. FF = 0.645 and 0.656 and η = 7.54 and 8.36% with B2H6 ratios of 0.5 and 1%respectively.