Set-up for Nanosized Powder Synthesis and Set-up for Deposition of Composite and Multilayer Films

The set-up for synthesis of nanosized powder, fullerenes, nanowires and nanoparticles with structure core- shell was operated by us. It is possible to control the synthesis processes by changing the value and frequency of arc current and pressure in the chamber. The capability of direction of the different fullerene content and nanoparticles and nan-owires structures was structurally and principally in the set-up for nanosized powder synthesis. The main technical characteristics of set-up: Productivity: 60 g/h fullerene contained condensate, 6 g/h-fullerene; Set-up power: 16 kW; Helium expense: 1-4 l/min; With pressure increasing the fullerene content increased in the fullerene soot. With Ni in-putting in plasma the carbon fibers and nanoparticles were produced, their proportions can be alter by pressure change. At Si inputting during synthesis the particles SiC coated by carbon with sp2 and some ad-dition of sp3 hybridization, also nanowires SiC with diameter 20-60 nm and the length – several microns were synthesized. The set-up for deposition of composite and multilayer films was operated on the base of vacuum apparatus (VUP-5) with inductive sensitive heat of crucibles from 0 till 20000С. With the help of this set-up the semiconductor films: fullerite- WO3 (with the resistance 104-107 Om) and fullerite-B (with resistance 105-109 Om) were obtained. This films may be used for the solution the problems of electronics.