A Novel and Single Chip Tri-Band Low-Noise Amplifier for Wlan, Wifi and Wimax Receivers

In first stage of each microwave receiver there is Low Noise Amplifier (LNA) circuit, and this stage hasimportant rule in quality factor of the receiver. The design of a LNA in Radio Frequency (RF) circuitrequires the trade-off many importance characteristics such as gain, Noise Figure (NF), stability, powerconsumption and complexity. This situation forces designers to make choices in the design of RF circuits. Inthis paper the aim is to design and simulate a novel and single Chip consists of a tri-band low noiseamplifier (LNA) operating simultaneously at three frequency bands 1.9 GHz, 2.4 GHz and 5 GHz forWLAN, WiFi and WiMax receivers, is designed and presented in this paper. It can be used in manyapplications of wireless communication (GSM, Zigbee, Bluetooth, Wi-Fi, HiperLAN, UWB, etc ...) for 3Gand 4G networks. The proposed circuit is based on two amplifiers, dual-band and simple band, withtransistor GaAs FET type ATF 10136 that has a better performance, successful integration of feasibilityand a low price compared with other technologies. Simulations of the operation of the amplifier wereperformed with the software Agilent Advanced Design System (ADS) and Ansoft software andperformance of the amplifier were recorded and analyzed. A single stage LNA has successfully beendesigned with 29.3dB, 24.56dB and 11.93dB with noise figure of 0.44dB, 0.49dB and 4.42dB respectively atthree frequency bands 1.9 GHz, 2.5 GHz and 5 GHz.