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ISSN: 2333-9721
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Nano CMOS

Keywords: nano CMOS , FET

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Abstract:

Complementary metal-oxide-semiconductor (CMOS) has become major challenge to scaling and integration. However, innovation in transistor structures and integration of novel materials are needed to sustain this performance trend. CMOS variability in the scaling technology becoming very important concern because of limitation of process control over statistical variability related to the fundamental discreteness of charge and matter. Different aspects responsible for device variability are discussed in this article. The challenges and opportunities of nano CMOS technology are outlined here.

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