Application of the level set method on the non-convex Hamiltonians

Application of the level set method extended for the case of non-convex Hamiltonians is illustrated by the three dimensional (3D) simulation results of the profile evolution during anisotropic wet etching of silicon. Etching rate function is modeled on the basis of the silicon symmetry properties, by means of the interpolation technique using experimentally obtained values of the principal [100], [110], [111], and high index [311] directions in KOH solutions. The resulting level set equations are solved using an open source implementation of the sparse field method.