Ultrathin body (UTB) and nanoscale body (NSB) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46？nm and lower than 5？nm, respectively, were fabricated using a selective “gate-recessed” process on the same silicon wafer. Their current-voltage characteristics measured at room temperature were found to be surprisingly different by several orders of magnitude. We analyzed this result by considering the severe mobility degradation and the influence of a huge series resistance and found that the last one seems more coherent. Then the electrical characteristics of the NSB can be analytically derived by integrating a gate voltage-dependent drain source series resistance. In this paper, the influence of the channel thickness on the series resistance is reported for the first time. This influence is integrated to the analytical model in order to describe the trends of the saturation current with the channel thickness. This modeling approach may be useful to interpret anomalous electrical behavior of other nanodevices in which series resistance and/or mobility degradation is of a great concern. 1. Introduction Nanoscale silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) based devices are the building blocks of up-to-date systems allowing ultrafast data processing. This is in accordance with efforts to develop new generation of ultra-fast computers based on combined electronic and signal processing on one hand [1] and advanced generations of nanoscale devices (NSB) for communication systems [2, 3] on the other hand. In this paper, we report the influence of the silicon channel thickness on the electrical characteristics of SOI MOSFET NSB, and we present an accurate model permitting to evaluate the series resistance and the saturation current as a function of the thickness or of the gate voltage, when part of the aim is to explain the anomalous transport behavior of the thinner channels having a channel’s thickness as low as 1.6？nm and obtained by a selective gate-recessed process [4]. The excellent control of the short channel effects, achievable by means of UTB SOI MOSFET architectures, makes them good candidates for ultimate nanometrics scale. Consequently, the transport properties’ study of thin semiconductor films has attracted considerable attention in the recent years. In this paper, we present the influence of the NSB’s channel thickness on the series resistance in order to complete the unified model of the NSB’s electrical characteristics. In addition to last years’ existing knowledge in series
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