全部 标题 作者
关键词 摘要

OALib Journal期刊
ISSN: 2333-9721
费用:99美元

查看量下载量

相关文章

更多...

Wagner-Vengrenovich Distribution

DOI: 10.1155/2013/651576

Full-Text   Cite this paper   Add to My Lib

Abstract:

The process of coarsening of nanoclusters or nanocrystals (NCs) is investigated for the case when cluster growth (dissolution) is governed simultaneously by both diffusion along dislocation pipes and the rate of formation of chemical connections (chemical reaction) at cluster surface, namely, Wagner’s growing mechanism. For that, the total flow of atoms to (from) a cluster is represented by two parts, namely, diffusion part and the Wagner (kinetic) one. The dependence of the rate of growth of NC on the ratio of the parts of the total flow has been determined as well as the NC’s size distribution function referred to as the Wagner-Vengrenovich distribution. Computed distribution is compared with experimentally obtained histograms. 1. Introduction Ostwald’s ripening (OR) is the final stage of formation of a new phase as a result of phase transformation, such as decay of oversaturated solid solutions. Nanoclusters or nanocrystals (NCs) of new phase having different sizes interact through the Gibbs-Thomson effect that results in dissolution of small NC and growth of large ones. Diffusion growth of NC under matrix of volume diffusion (ls-mechanism) has been firstly studied by Lifshitz and Slyozov [1, 2]. Wagner has showed later [3] that beside diffusion mechanism, another mechanism of NC growth is possible, which is governed by the rate of formation of chemical connections (chemical reaction) at NC surface (w-mechanism). The theory developed in the cited papers is referred to as the LSW theory. Practical verification of this theory shows that in many cases, it is proper for the description of experimental data on temporal behavior of the mean NC size and the NC size the distribution function, while in other cases the LSW theory must be refined. In this connection, NC growth is considered in papers [4, 5] as a result of combined action of two growing mechanisms, diffusion (ls) and Wagner’s (w) ones. In the framework of the modified LSW theory and taking into account both mechanisms of growing (ls and w), we can obtain a size distribution in the form of the generalized Lifschitz-Slyozov-Wagner distribution [4]. This distribution can refer to a much wider range of the experimental histograms than each of the Lifschitz-Slyozov (LS) and Wagner’s ( ) distributions separately. The products of nanotechnologies [6–8] become new objects of applying the LSW theory. As sizes become 100?nm and less [9], the characteristics of both separate NCs and of the system as a whole change cardinally that provides practically useful properties. The OR is among probable factors

References

[1]  I. M. Lifshits and V. V. Slyozov, “On kinetics of diffusion decay of oversaturated solid solutions,” JETP, vol. 35, pp. 479–492, 1958.
[2]  I. M. Lifshitz and V. V. Slyozov, “The kinetics of precipitation from supersaturated solid solutions,” Journal of Physics and Chemistry of Solids, vol. 19, no. 1-2, pp. 35–50, 1961.
[3]  C. Wagner, “Theorie der Alterung von Niderschlagen durch Uml?sen (Ostwald Reifung),” Zeitschrift Für Elektrochemie, vol. 65, no. 7-8, pp. 581–591, 1961.
[4]  R. D. Vengrenovich, B. V. Ivanskii, and A. V. Moskalyuk, “Generalized Lifshitz-Slyozov-Wagnerdistribution,” JETP, vol. 131, pp. 1040–1047, 2007.
[5]  R. Vengrenovich, B. Ivanskii, and A. Moskalyuk, Mass Transfer—Advanced Aspects, In Tech, Rijeka, Croatia, 2011.
[6]  Z. F. Wu, M. Q. Zeng, L. Z. Ouyang, X. P. Zhang, and M. Zhu, “Ostwald ripening of Pb nanocrystalline phase in mechanically milled Al-Pb alloys and the influence of Cu additive,” Scripta Materialia, vol. 53, no. 5, pp. 529–533, 2005.
[7]  P. E. J. R. D. del Castillo, P. Reischig, and S. van der Zwaag, “Tailoring of Ostwald ripening behaviour in multicomponent Al alloys,” Scripta Materialia, vol. 52, no. 8, pp. 705–708, 2005.
[8]  D.-K. Lee and N.-M. Hwang, “Thermodynamics and kinetics of monodisperse alloy nanoparticles synthesized through digestive ripening,” Scripta Materialia, vol. 61, no. 3, pp. 304–307, 2009.
[9]  U. Hartmann, Faszination Nanotechnologie, Elsevier, Spektrum Akademischer, Heidelberg, Germany, 2006.
[10]  S. A. Kukushkin, A. V. Osipov, F. Schmitt, and P. Hess, “The nucleation of coherent semiconductor islands during the Stranski-Krastanov growth induced by elastic strains,” Semiconductors, vol. 36, no. 10, pp. 1097–1105, 2002.
[11]  N. A. Cherkashin, M. V. Maksimov, A. G. Makarov et al., “Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode,” Semiconductors, vol. 37, no. 7, pp. 861–865, 2003.
[12]  V. N. Nevedomskii, N. A. Bert, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin, “GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process,” Semiconductors, vol. 43, no. 12, pp. 1617–1621, 2009.
[13]  M. Bürger, T. Schupp, K. Lischka, and D. As, “Cathodoluminescence spectroscopy of zinc-blende GaN quantum dots,” Physica Status Solidi C, vol. 9, no. 5, pp. 1273–1277, 2012.
[14]  P.-S. Kuo, B.-C. Hsu, P.-W. Chen, P. S. Chen, and C. W. Liu, “Recessed oxynitride dots on self-assembled Ge quantum dots grown by LPD,” Electrochemical and Solid-State Letters, vol. 7, no. 10, pp. G201–G203, 2004.
[15]  R. D. Vengrenovich, Y. V. Gudyma, and S. V. Yarema, “Dislocation mechanism of quantum dot formation in heteroepitaxial structures,” Physica Status Solidi B, vol. 242, no. 4, pp. 881–889, 2005.
[16]  R. D. Vengrenovich, B. V. Ivanskii, and A. V. Moskalyuk, “Ostwald ripening of nanoislands in semiconductor heterosystems and its influence on optical properties,” Opto-Electronics Review, vol. 18, no. 2, pp. 168–175, 2010.
[17]  I. N. Stranski and L. Krastanov, “Theory of orientation separation of ionic crystal,” Sitzungsberichte Der Akademie Der Wifienschaften. Wien. Mathematisch-Naturwifienschaftlich Klasse, Abteilung IIB, vol. 146, pp. 797–810, 1937.
[18]  A. de Kergommeaux, J. Faure-Vincent, A. Pron, R. de Bettignies, B. Malaman, and P. Reiss, “Surface Oxidation of Tin Chalcogenide Nanocrystals Revealed by 119Sn-M?ssbauer Spectroscopy,” Journal of the American Chemical Society, vol. 134, no. 28, pp. 11659–11666, 2012.
[19]  A. Layek, G. Mishra, A. Sharma et al., “A generalized three-stage mechanism of ZnO nanoparticle formation in homogeneous liquid medium,” The Journal of Physical Chemistry C, vol. 116, pp. 24757–24769, 2012.
[20]  R. Viswanatha, H. Amenitsch, and D. D. Sarma, “Growth kinetics of ZnO nanocrystals: a few surprises,” Journal of the American Chemical Society, vol. 129, no. 14, pp. 4470–4475, 2007.
[21]  R. Viswanatha, P. K. Santra, C. Dasgupta, and D. D. Sarma, “Growth mechanism of nanocrystals in solution: ZnO, a case study,” Physical Review Letters, vol. 98, Article ID 255501, 4 pages, 2007.
[22]  L. M?dler, W. J. Stark, and S. E. Pratsinis, “Rapid synthesis of stable ZnO quantum dots,” Journal of Applied Physics, vol. 92, no. 11, pp. 6537–6540, 2002.
[23]  S. Tutashkonko, T. Nychyporuk, V. Lysenko, and M. Lemiti, “Thermally induced Ostwald ripening of mesoporous Ge nanostructures,” Journal of Applied Physics, vol. 113, Article ID 023517, 8 pages, 2013.
[24]  A. P. Thurber, G. Alanko, L. Beausoleil II, K. N. Dodge, C. B. Hanna, and A. Punnoose, “Unusual crystallite growth and modification of ferromagnetism due to aging in pure and doped ZnO nanoparticles,” , Journal of Applied Physics, vol. 111, Article ID 07C319, 3 pages, 2012.
[25]  S. Mahamuni, K. Borgohain, B. S. Bendre, V. J. Leppert, and S. H. Risbud, “Spectroscopic and structural characterization of electrochemically grown ZnO quantum dots,” Journal of Applied Physics, vol. 85, no. 5, pp. 2861–2865, 1999.
[26]  H. Kreye, “Einflus von Versetzungen auf die Umlosung von Teilchen,” Zeitschrift Für Metallkunde, vol. 61, pp. 108–113, 1970.
[27]  R. D. Vengrenovich, “Onkinetics of coalescence of disperse extractions at dislocation network,” FMM, vol. 39, pp. 435–439, 1975.
[28]  R. D. Vengrenovich, Y. V. Gudyma, and S. V. Yarema, “Ostwald ripening under dislocation diffusion,” Scripta Materialia, vol. 46, no. 5, pp. 363–367, 2002.
[29]  R. D. Vengrenovich, A. V. Moskalyuk, and S. V. Yarema, “Island size distribution under conditions of dislocation-surface diffusion in semiconductor heterostructures,” Semiconductors, vol. 40, no. 3, pp. 270–275, 2006.
[30]  R. D. Vengrenovich, A. V. Moskalyuk, and B. V. Ivanskii, “Ostwald's ripening of quantum-dimensional nanocrystals in conditions of the mixed diffusion,” Metallofizika i Noveishie Tekhnologii, vol. 30, no. 2, pp. 247–266, 2008.
[31]  R. D. Vengrenovich, “On the Ostwald ripening theory. Overview 20,” Acta Metallurgica, vol. 20, pp. 1079–1086, 1982.
[32]  G. M. Novotny and A. J. Ardell, “Precipitation of Al3Sc in binary Al-Sc alloys,” Materials Science and Engineering A, vol. 318, no. 1-2, pp. 144–154, 2001.
[33]  C. B. Fuller and D. N. Seidman, “Temporal evolution of the nanostructure of Al(Sc,Zr) alloys: part II-coarsening of Al3( ) precipitates,” Acta Materialia, vol. 53, no. 20, pp. 5415–5428, 2005.

Full-Text

Contact Us

[email protected]

QQ:3279437679

WhatsApp +8615387084133