We have developed NEMO-VN2, a new quantum device modeling tool that simulates a wide variety of quantum devices including the resonant tunneling diode, the single electron transistor, the molecular field effect transistor, the carbon nanotube field effect transistor, and the spin field effect transistor. In this work the nonequilibrium Green’s function is used to perform a comprehensive study of the emerging nanoelectronics devices. The program has been written by using graphic user interface of Matlab. NEMO-VN2 uses Matlab to solve Schrodinger equation to get current-voltage characteristics of quantum devices. In the paper, we present a short overview of the theoretical methodology using non-equilibrium Green’s function for modeling of various quantum devices and typical simulations used to illustrate the capabilities of the NEMO-VN2. 1. Introduction The dimensional scaling of complementary metal-oxide-semiconductor (CMOS) device and process technology will become much more difficult as the semiconductor industry approaches 10？nm (6？nm physical channel length) around year 2019 and will eventually approach asymptotic end according to the International Technology Roadmap for Semiconductor for emerging research devices [1]. Beyond this period of traditional CMOS, it may be possible to continue functional scaling by integrating alternative electronic device onto a silicon platform. These alternative electronic devices include 1D structures such as carbon nanotube field effect transistor (CNTFET), resonant tunneling diode (RTD), single electron transistor (SET), molecular field effect transistor (MFET), and spin devices, all of which are discussed in this paper. Despite these exciting possibilities, nanoelectronic devices are still in their relative infancy. The expense and difficulty of device fabrication precludes simply building and testing vast arrays of quantum devices. To focus efficiently on the best design, engineers need a tool that predicts electronic characteristics as a function of the device geometry and composition. In the more scientific mode, such a simulator would greatly enhance the understanding of quantum effects that drive the transport process and provide a means to investigate new device concepts. Even conventional devices require a correction for quantum effects associated with the smaller device features. MOS devices, for example, exhibit electron confinement effects in the inversion layer. This phenomenon is a function of decreasing oxide thickness rather than the overall size of the device. Quantum effects become important as the
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