In this work, the study of the influences of lifetime, doping concentration and absorption layer thickness to resistant-
area product (R0A) and quantum efficiency of Pb1-xSnxSe photovoltaic detector are presented. Three
fundamental current mechanisms including diffusion, generation-recombination, and tunneling models are considered.
Using optimal doping concentration and absorption layer thickness parameters, the calculated detectivity
(D*) of Pb1-xSnxSe photovoltaic detector is over 1012 cm Hz1/2/W.
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