刘尚合,武占成. 静电放电及危害防护[M]. 北京：北京邮电大学出版社,2004：83-86. LIU Shanghe, WU Zhancheng. Electrostatic discharge and hazard protection[M]. Beijing, China: Beijing University of Posts and Telecommunications Press, 2004: 83-86.
[2]
IEC 61000-4-2 Electromagnetic compatibility (EMC) part 4: testing and measurement techniques section 2: electrostatic discharge immunity tests[S], 2001.
[3]
Lin D, Pommerenke D, Barth J, et al . Metrology &；
[4]
methodology of system level ESD testing[C]∥Electric Overstress/Electrostatic Discharge(EOS/ESD) Symposium. Reno, USA: [s.n.], 1998: 29-39.
[5]
盛松林,刘尚合,胡小峰. 国外ESD相关电磁场实验研究现状及其进展[J]. 安全与电磁兼容,2003(3)：39-42. SHENG Songlin, LIU Shanghe, HU Xiaofeng. Review of foreign experiment investigation on EM-fields radiated to ESD[J]. Safety &；
[6]
EMC, 2003(3): 39-42.
[7]
原青云,刘尚合,吴 勇,等. 静电放电抗扰度试验方法存在的问题及相关研究[J]. 军械工程学院学报,2008,20(4)：58-62. YUAN Qingyun, LIU Shanghe, WU Yong, et al . Research on the problems of ESD Immunity test method[J]. Journal of Ordnance Engineering College, 2008, 20(4): 58-62.
[8]
Wang K, Pommerenke D, Zhang J M, et al . The PCB level ESD immunity using 3 dimension ESD scan system[C]∥Proceedings of IEEE International Symposium on Electromagnetic Compatibility. Silicon Valley, USA: IEEE, 2004: 343-348.
[9]
David P, Giorgi M, Jayong K, et al . Application and limits of IC and PCB scanning methods for immunity analysis[C]∥Proceedings of 18 th International Zurich Symposium on EMC. Munich, Germany: [s.n.], 2007: 83-86.
[10]
Giorgi M, Jayong K, Qing C, et al . Susceptibility scanning as a failure analysis tool for system level electrostatic discharge (ESD) problems[J]. IEEE Transcations on Electromagnetic Compatibility, 2008, 50(2): 268-276.
[11]
Smedes T. ESD testing of devices, ICs and systems[J]. Microelectronics Reliability, 2009, 49(9/11): 941-945.
[12]
来 萍,邝贤军,梁思晓. 电子元器件和电子设备的ESD试验方法比较[J]. 电子产品可靠性与环境试验,2009,27(2)：37-42. LAI Ping, KUANG Xianjan, LIANG Sixiao. Comparison of ESD test method for electronic devices and electrical equipments[J]. Electronic Product Reliability and Environmental Testing, 2009, 27(2): 37-42.
[13]
Wolfgang S, Tilo B, Reinhold G, et al . Do ESD fails in systems correlate with IC ESD robustness[J]. Microelectronics Reliability, 2009, 49(9/11): 1079-1085.
[14]
Jayong K, Qing C, David P, et al . The repeatability of system level ESD test and relevant ESD generator parameters[C]∥Proceedings of IEEE International symposium on EMC. Detroit, Michigan, USA: IEEE, 2008: 1-6 .
[15]
Maloney T J, Khurana N. Transmission line pulsing techniques for circuit modeling of ESD phenomena[C]∥EOS/ESD Symposium. Minneapolis, USA: [s.n.], 1985: 49-54.
[16]
Grund E, Gauthier R. TLP systems with combined 50 and 500-Ω；
[17]
impedance probes and kelvin probes[C]∥Electric Overstress / Electrostatic Discharge (EOS/ESD) Symposium. Las Vegas, USA: [s.n.], 2003: 1-10.
[18]
曾传滨,李 晶,王显泰,等. 传输线脉冲发生器电压探测中振荡问题的研究[J]. 半导体技术,2009,34(4)：365-369. ZENG Chuanbin, LI Jing, WANG Xiantai, et al . Study on the oscillation problem of voltage probing in transmission line pulsing generator system[J]. Semiconductor Technology, 2009, 34(4): 365-369.
[19]
Cao Y Q, Johnsson D, Arndt B, et al . A TLP-based human metal model ESD-generator for device qualification according to IEC 61000-4-2[C]∥Proceedings of Asia-Pacific Symposium on Electromagnetic Compatibility. Beijing, China: [s.n.], 2010: 471-474.
[20]
Li Z, Xiao J, Byongsu S, et al . Field injection probes for field coupled electrostatic discharge sensitivity database of ICs[C]∥Proceedings of IEEE International Symposium on Electromagnetic Compatibility. Fort Lauderdale, USA: IEEE, 2010: 329-333.
[21]
米 彦,莫登斌,姚陈国,等. ns脉冲电场发生器的研制及应用[J]. 高电压技术,2008, 34(2): 368-372. MI Yan, MO Dengbin, YAO Chenguo, et al . Development and application of nanosecond pulsed electric fields generator[J]. High Voltage Engineering, 2008, 34(2): 368-372.
[22]
姜春阳,夏胜国,周 峰,等. 用于产生非平衡等离子体的纳秒级脉冲电源研制[J]. 高电压技术,2012,38(7)：1770-1776. JIANG Chunyang, XIA Shengguo, ZHOU Feng, et al . Development of a naosecond pulsed power generator for exciting non-thermal plasma[J]. High Voltage Engineering, 2012, 38(7): 1770-1776.
[23]
邓 桃,吴广宁,周 凯,等. 一种纳秒级高压脉冲发生器的研制[J]. 高压电器,2007,43(2)：131-132. DENG Tao, WU Guangning, ZHOU Kai, et al . Development of a high voltage nanosecond pulse generator[J]. High Voltage Apparatus, 2007, 43(2): 131-132.
