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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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基于铁电聚合物p(vdf-trfe)的多级存储研究
DOI: 10.13232/j.cnki.jnju.2015.04.005, PP. 684-691
Keywords: 纳米压印,pfm,p(vdf-trfe),多级存储
Abstract:
铁电聚合物p(vdf-trfe)具有可兼容硅基元件和可溶液加工等优点，在未来可擦写式非易失存储领域极具应用前景。构建多级存储态是提高存储密度和降低生产成本的有力途径。我们以纳米压印为主要实现手段，通过构建高度有序的纳米图案化导电基底的方式，简单快捷地实现了p(vdf-trfe)薄膜高密度的多级存储功能。文中主要应用压电响应力显微镜(pfm)从微观上观测了图案化导电基底上p(vdf-trfe)在电压加载后的极化变化情况，直观地证实了其在外电场的作用下可形成了三种不同的极化状态。
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