A modular and
generic monolithic integrated MEMS process for integrating CMOS technology with
polysilicon microstructures is presented. The proposed process flow is designed
with an intra CMOS approach to fabricate the microstructures into trenches
without the need of planarization techniques. After annealing at 1000°C at
significant period of time, it is shown that Id-Vg characteristics of
the CMOS transistors remain almost unchanged, indicating their robustness to
the intra process fabrication for the micromechanical structures. The CMOS module
is designed with a 3 μm length as a minimum feature and this process results
with a minimum of residual strain and stress on the micromechanical devices (ε = 1.28 × 10-4 and σ = -21 MPa).
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