Bulk
Czochralski silicon crystals were decorated with Cu and characterized by
transmission electron microscopy (TEM) with energy-dispersive spectroscopy
(EDS), atomic force microscopy (AFM), optical microscopy (OM), scanning
electron microscopy (SEM), and photoluminescence spectroscopy (PL). The
vacancy-type core, oxidation-induced stacking faults (OISF) ring, nearly
defect-free ring, and self-interstitial-type rich outer ring were delineated in
the Si crystal wafer. At the surface of the Si crystal, vertical-horizontal
line (V-H line) defects and windmill defects (W-defects) were formed instead of
OISF. The families of growth planes and directions were expressed as {011} and
<110> for the V-H line and {010} and <010> for W-defects,
respectively. In addition to V-H line
defects and W-defects, pits or voids and Si oxide with dissolved Cu were found
in the Si crystal wafer.
References
[1]
Vaálek, L. and Síik, J. (2012) Defect Engineering during Czochralski Crystal Growth and Silicon Wafer Manufacturing. In: Kolesnikov, N., Ed., Modern Aspects of Bulk Crystal and Thin Film Preparation, InTech, Rijeka.
[2]
Brown, R.A., Wang, Z. and Mori, T. (2001) Engineering Analysis of Microdefect Formation during Silicon Crystal Growth. Journal of Crystal Growth, 225, 97-109. https://doi.org/10.1016/S0022-0248(01)00825-9
[3]
Ammon, W.V., Dornberger, E. and Hansson, P.O. (1999) Bulk Properties of Very Large Diameter Silicon Single Crystals. Journal of Crystal Growth, 198-199, 390-398. https://doi.org/10.1016/S0022-0248(98)01140-3
[4]
Voronkov, V.V. (2008) Grown-In Defects in Silicon Produced by Agglomeration of Vacancies and Self-Interstitials. Journal of Crystal Growth, 310, 1307-1314. https://doi.org/10.1016/j.jcrysgro.2007.11.100
[5]
ASTM standard F 1809-02 (2003) Standard Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon. ASTM International, West Conshohocken.
[6]
Singh, S., Debucquoy, M., Wostyn, K., Cornagliotti, E., O’Sullivan, B., Posthuma, N. and Poortmans, J. (2013) N-Type Silicon Wafer Screening for IBC Solar Cells by Different Thermal Treatments. Proceedings 28th European Photovoltaic Solar Energy Conference and Exhibition, Paris, 2 October 2013, 891-894.
[7]
Romano-Rodrí¹guez, A., Bachrouri, A, López, M., Morante, J.R., Misiuk, A., Surma, B. and Jun, J. (2000) TEM Characterization of High Pressure-High-Temperature-Treated Czochralski Silicon Samples. Materials Science and Engineering: B, 73, 250-254. https://doi.org/10.1016/S0921-5107(99)00473-0
[8]
Mule’Stagno, L. (2002) A Technique for Delineating Defects in Silicon. Solid State Phenomena, 82-84, 753. https://doi.org/10.4028/www.scientific.net/SSP.82-84.753
[9]
Válek, L., Stehlík, S., Orava, J., Durík, M., Sik, J. and Wágner, T. (2007) Limits of the Copper Decoration Technique for Delineating of the V-I Boundary. Journal of Physics and Chemistry of Solids, 68, 1157. https://doi.org/10.1016/j.jpcs.2007.01.038
[10]
Shin, J.S. and Lyo, I.W. (2003) Influence of Cu-Decoration to Individual Crystal Originated Pits on Si Wafer. Japanese Journal of Applied Physics, 42, 4187. https://doi.org/10.1143/JJAP.42.4187
[11]
Wen, C.-Y. and Spaepen, F. (2007) Filling the Voids in Silicon Single Crystals by Precipitation of Cu3Si. Philosophical Magazine, 87, 5565-5579. https://doi.org/10.1080/14786430701675811
[12]
Hasebe, M., Takeoka, Y., Shinoyama, S. and Naito, S. (1989) Formation Process of Stacking Faults with Ringlike Distribution in CZ-Si Wafers. Japanese Journal of Applied Physics, 28, L1999. https://doi.org/10.1143/JJAP.28.L1999
[13]
Xu, J., Wang, W., Yang, D. and Moeller, H.J. (2009) Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon. Journal of Alloys and Compounds, 478, 758-762.
[14]
Furukawa, J., Tanaka, H., Nakada, Y., Ono, N. and Shiraki, H. (2000) Investigation on Grown-In Defects in CZ-Si Crystal under Slow Pulling Rate. Journal of Crystal Growth, 210, 26-30.
[15]
Voronkov, V.V. (2000) Formation of Voids and Oxide Particles in Silicon Crystals. Materials Science and Engineering: B, 73, 69-76.
[16]
Voronkov, V.V. (2008) Grown-In Defects in Silicon Produced by Agglomeration of Vacancies and Self-Interstitials. Journal of Crystal Growth, 310, 1307-1314.
[17]
Ueki, T., Itsumi, M. and Takeda, T. (1997) Octahedral Void Structure Observed in Grown-In Defects in the Bulk of Standard Czochralski-Si for MOS LSIs. Japanese Journal of Applied Physics, 36, 1781-1785. https://doi.org/10.1143/JJAP.36.1781
[18]
Kato, M., Yoshida, T., Ikeda, Y. and Kitagawara, Y. (1996) Transmission Electron Microscope Observation of “IR Scattering Defects” in As-Grown Czochralski Si Crystals. Japanese Journal of Applied Physics, 35, 5597-5601. https://doi.org/10.1143/JJAP.35.5597
