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- 2018
具有提高Q值退耦结构的MEMS谐振器研究
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Abstract:
为了提高MEMS谐振器的品质因数（Q值），该文设计一个微型的具有能量退耦作用的外框作为支撑结构。所设计的AlN压电谐振器工作在30 MHz横向振动模态，其Q值可以达到4.3×104，对应的f·Q乘积为1.29×1012。谐振器频率与外框的机械谐振频率比值约10:1，减小了谐振器到基底的能量耦合，从而降低能量损耗并提高谐振器Q值。通过理论和有限元分析并对谐振器的频率响应进行建模，两种方法的模型结果一致，说明了具有能量退耦外框的谐振器能降低锚点造成的能量损耗，从而有效地提高横向振动模态AlN压电谐振器的Q值。
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