We show that Hall-like current can be induced by acoustic phonons in a nondegenerate, semiconductor fluorine-doped single-walled carbon nanotube (FSWCNT) using a tractable analytical approach in the hypersound regime ？(q is the modulus of the acoustic wavevector and is the electron mean free path). We observed a strong dependence of the Hall-like current on the magnetic field, H, the acoustic wave frequency, , the temperature, T, the overlapping integral, , and the acoustic wavenumber, q. Qualitatively, the Hall-like current exists even if the relaxation time does not depend on the carrier energy but has a strong spatial dispersion, and gives different results compared to that obtained in bulk semiconductors. For and , the Hall-like current is in the absence of an electric field and in the presence of an electric field at 300 K. Similarly, the surface electric field due to the Hall-like current is in the absence of an external electric field. In the presence of an external electric field, and for at 300 K. q and can be used to tune the Hall-like current and of the FSWCNT. This offers the potential for room temperature application as an acoustic switch or transistor, as well as a material for ultrasound current source density imaging (UCSDI) and AE hydrophone device in biomedical engineering.
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![\"\"](\"Edit_32e72a2c-f884-45d7-bec3-c005e164385d.png\")
？(q is the modulus of the acoustic wavevector and ![\"\"](\"Edit_69914c5a-2860-41a6-9aba-648633f68a83.png\")
is the electron mean free path). We observed a strong dependence of the Hall-like current on the magnetic field, H, the acoustic wave frequency, ![\"\"](\"Edit_4567489f-355f-4759-99b2-0a21272aeb88.png\")
, the temperature, T, the overlapping integral, ![\"\"](\"Edit_edbf4f80-4ed9-4d34-8ba1-179197ec1247.png\")
, and the acoustic wavenumber, q. Qualitatively, the Hall-like current exists even if the relaxation time ![\"\"](\"Edit_8344de9c-6706-472e-b426-a9620c8754a8.png\")
does not depend on the carrier energy but has a strong spatial dispersion, and gives different results compared to that obtained in bulk semiconductors. For ![\"\"](\"Edit_a33e68d0-303f-46f8-a1a2-e7374faafcb0.png\")
and ![\"\"](\"Edit_33b89c02-dd1a-4322-a3e0-183ffe8513e9.png\")
, the Hall-like current is ![\"\"](\"Edit_199b6ec8-b164-40c6-892f-5a6d5aa0dcae.png\")
in the absence of an electric field and in the presence of an electric field at 300 K. Similarly, the surface electric field ![\"\"](\"Edit_3e16d71d-4c63-46a2-b5d0-92c2b22c9718.png\")
due to the Hall-like current is ![\"\"](\"Edit_0ebd120e-63ea-496b-bf03-3f67144b47c4.png\")
in the absence of an external electric field. In the presence of an external electric field, ![\"\"](\"Edit_27616ffb-4e21-449c-8406-b0b3db21a112.png\")
and ![\"\"](\"Edit_27c308b6-57a9-4859-b2ce-f59c767b25df.png\")
for ![\"\"](\"Edit_317a1e77-9cc5-46bd-a05c-684c6f40cc4b.png\")
at 300 K. q and ![\"\"](\"Edit_bfa66af4-0690-4f4b-90f2-d0096b4dd8b2.png\")
can be used to tune the Hall-like current and ![\"\"](\"Edit_463c1064-4d55-4435-ae85-8bae9aa76148.png\")
of the FSWCNT. This offers the potential for room temperature application as an acoustic switch or transistor, as well as a material for ultrasound current source density imaging (UCSDI) and AE hydrophone device in biomedical engineering.
