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- 2019
High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 DielectricDOI: 10.1186/s11671-019-2959-1 Keywords: Amorphous In-Ga-Zn-O, Thin-film transistor, Room temperature, Atomic layer deposition, Hydrogen-rich Al2O3 Abstract: Electrical properties of Al2O3 films deposited at different temperatures. a Dielectric constant versus frequency. b Leakage current density versus electric fiel
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