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- 2019
Ge pMOSFETs with GeOx Passivation Formed by Ozone and Plasma Post OxidationDOI: 10.1186/s11671-019-2958-2 Keywords: Germanium, Passivation, Ozone, Plasma, Post oxidation, Metal-oxide-semiconductor field-effect transistor (MOSFET) Abstract: a Key process flow for fabricating Ge pMOSFETs with GeO2 surface passivation with three different passivation methods. b Schematic and c microscope images of the fabricated Ge transisto
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