Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer

DOI: 10.1186/s11671-019-2970-6

Keywords: Tunnel switch, Mg-doped LiNbO3, Atomic layer deposition, Ion slicing, Ferroelectric memory

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Abstract:

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