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- 2019
Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access MemoryDOI: 10.1186/s11671-019-2956-4 Keywords: RRAM, Low power, Atomic layer deposition, Titanium oxide Abstract: a The structure of Pt/HfO2/TiOx/Pt device. b The fabrication process flo
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