High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer

DOI: 10.1186/s11671-019-3025-8

Keywords: AlGaN/GaN HEMT, Fluorine ion implantation, SiNx passivation layer, Breakdown voltage, Dynamic ON-resistance

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Abstract:

Three-dimensional schematic of a FPL HEMT (inset: HR-TEM micrograph of LPCVD SiNx), b FBL HEMT, and c Conv. HEM

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