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-  2018 

Synthesis of 2D transition metal dichalcogenides by chemical vapor deposition with controlled layer number and morphology

DOI: 10.1186/s40580-018-0158-x

Keywords: Transition metal dichalcogenides (TMDs), 2D materials, Growth mechanisms, Chemical vapor deposition, Morphology

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Abstract:

4 types of growth routes for TMDs. a Two-step thermolysis process synthesis from (NH4)2MoS4 precursor on SiO2/Si or sapphire substrates followed by the two-step annealing process on insulating substrates and finally transferred onto another substrate [39], Copyright 2012, American Chemical Society. b Layer by layer deposition of MoS2 from MoO3 by surface sulfurization and transferred to another substrate one by one [45], Copyright 2013, American Chemical Society. c Simple vapor transport method showing MoS2 films were deposited on insulating substrate at high temperature from MoS2 powder precursor under inert atmosphere [47], Copyright 2013, American Chemical Society. d (i) LPCVD system setup for TMDs, (ii) Mo–O–S ternary phase diagram illustrating the pathways for the CVD growth of MoS2 from MoO3 precursors, and (iii) Possible growth routes of MoS2 by the reaction of MoO3?x and S [36]. Copyright 2015, Royal Society of Chemistr

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