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- 2019
A quasi-ballistic drain current, charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regimeDOI: 10.1186/s40580-019-0189-y Keywords: Ballistic transport, Drift–diffusion, Quasi-ballistic, Scattering, SDG MOSFETs Abstract: Different transport phenomena and physical effects arising when the channel length L of a DG MOSFET undergoes rigorous scaling. The grey shaded area is the core device channel length regime for the proposed wor
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