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- 2019
Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealingDOI: 10.1186/s40580-019-0194-1 Keywords: Indium gallium zinc oxide IGZO, Post annealing, Capacitance–voltage measurement, X-ray photoelectron spectroscopy depth profiling, Electrical bias stress stability Abstract: The online version of this article (10.1186/s40580-019-0194-1) contains supplementary material, which is available to authorized users
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