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三维集成电路中硅通孔电阻参数计算解析式提取的研究
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Abstract:
硅通孔技术是三维集成电路实现层间垂直互连的关键，使三维集成电路具有连线短、尺寸小、功耗低、可异构等优点。作为三维集成电路中互连的硅通孔，其寄生参数的提取将直接影响到集成电路功耗，时延，噪声等方面的性能，因此硅通孔寄生参数提取对高性能芯片的成功设计具有十分重要意义。本文以高面率比圆柱硅通孔为研究对象，通过对不同尺寸参数下的圆柱硅通孔进行仿真，得到其电阻参数值，使用电磁场理论、曲线拟合方法，推导出高精度的电阻参数提取解析式。解析式可快速准确计算硅通孔的电阻参数值，大大提高了参数提取效率。
TSV technology is the key factor of realizing interlayer vertical interconnection in 3D IC and it brings such advantages to 3D IC as short wiring, small size, low power consumption and heterogeneous feature, etc. As the interconnected TSV in 3D IC, its parasitic parameter extraction will directly in-fluence IC performance in power consumption, time delay and noise, etc. Therefore, extracting TSV parasitic parameter is significant for successful design of a high-performance chip. This paper uses the cylinder TSV with high surface ratio as study subject. By simulating cylinder TSV of different dimension parameters, we obtain a resistance parameter value. The high-precision analytical formula for resistance parameter extraction is derived from electromagnetic field theory and curve fitting method. The analytic formula is able to rapidly and precisely calculate TSV resistance parameter value to largely improve parameter extraction efficiency.
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