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ISSN: 2333-9721
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-  2017 

The Energy Levels Splitting Calculated for the Heavy and Light Holes in a Cd 1-xZn xS Double Quantum Dot

Keywords: Double Quantum Dot, Cd1-xZnxS, Heavy and Light Holes, Tight Binding Approximation, Non Volatile Memories

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Abstract:

This work reports on a theoretical investigation of a double Cd 1-xZn xS quantum dot embedded in an insulating material.The quantum dots are assumed to have a flattened cylindrical geometry with a finite barrier at the boundary.The energy levels splitting has been computed, using the tight binding approximation, in the case of the heavy and light holes, as a function of zinc composition for different inter-quantum dot separations. An analysis of the results shows that, for the light holes, the coupling is maximum when x=0.8. Moreover, it has been demonstrated the strong localization character of the heavy holes in this nanostructure.

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