In this work, the AFORS-HET digital simulation
software was used to calculate the electrical characteristics of the
cell/n-ZnO/i-ZnO/n-Zn (O, S)/p-CIGSe2/p + -MoSe2/Mo/SLG.
When the thickness of the CIGSe2 absorber is between 3.5 and 1.5μm, the efficiency of the cell with an interfacial
layer of MoSe2 remains almost constant, with an efficiency of about
24.6%, higher to that of a conventional cell which is 23.4% for a thickness of
1.5 μm of CIGSe2. To achieve the expected results, the MoSe2 layer must be very thin less than or equal to 30 nm. In addition, a Schottky
barrier height greater than 0.45 eV severely affects the fill factor and the
open circuit voltage of the solar cell with MoSe2 interface layer.
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