基于GaAs基底的宽带大功率衰减器
Broadband High Power Attenuator Based on GaAs Substrate

衰减器是功率增益控制元件，运用于各种通信放大电路场景，对信号或者功率调节，以达到电路最优状态。在近几年科研人员共同努力下，MMIC技术已在各个方面有了突破，目前研究方向已往宽带、大功率等方向进发。本文涉及到的衰减器在实现国产化替代的同时，提供了大功率以及超宽带时的参考设计与具体流片。其裸片大小为1.2 × 1.0 mm，可满足QFN中2 × 2 mm的封装，衰减量为5 dB，频带范围DC-40GHz，功率承受力可达2 W。
The attenuator is a power gain control element, which is used in various communication amplifier circuit scenarios to adjust the signal or power to achieve the optimal state of the circuit. With the joint efforts of scientific researchers in recent years, MMIC technology has made breakthroughs in various aspects, and the current research direction has moved towards broadband, high power and other directions. The attenuator involved in this paper provides a reference design and specific tape-out for high power and ultra-wideband while realizing localization. Its bare chip size is 1.2 × 1.0 mm, which can meet the 2 × 2 mm package in QFN, the attenuation is 5dB, the frequency band range is DC-40GHz, and the power tolerance can reach 2 W.