Just as lead-based perovskites that are hot in solar cell preparation, Bi-based perovskites have demonstrated excellent performance in direct X-ray detection, especially the Cs3Bi2I9 single crystals (SCs). However, compared with lead-halide perovskites, one challenge for the Cs3Bi2I9 SCs for X-ray detection application is that it is difficult to prepare large-sized and high-quality SCs. Therefore, how to get a large area with a high-quality wafer is also as important as Cs3Bi2I9 growth method research. Here, different anti-solvents are used for the preparation of poly-crystalline powder with the Antisolvents precipitation (A) method, as a control, High-energy ball milling (B) was also used to prepare poly-crystalline powders. The resultant two types of Cs3Bi2I9 wafer exhibit a micro-strain of 1.21 × 10-3, a resistivity of 5.13 × 108 Ω cm and a microstrain of 1.21 × 10-3, a resistivity of 2.21 × 109 Ω cm. As a result, an X-ray detector based on the high-quality Cs3Bi2I9 wafer exhibits excellent dose rate linearity, a sensitivity of 588 μC·Gyairs-1·cm-2 and a limit of detection (LoD) of 76 nGyair·s-1.
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