The luminescence intensity of rare-earth ion-doped luminescent materials is closely related to the configuration of the anions around the rare-earth ions added to the host material and the lattice defects. And it is expected that this information will be reflected in the XRD pattern. In this study, the lumines-cence data and XRD patterns of Sm-doped TiO2 accumulated by our group are used to construct a model to predict the integrated luminescence intensity. The model was confirmed to be able to predict the integrated luminescence in-tensity with high accuracy. Furthermore, we found that the integrated lumi-nescence intensity of this system is closely related to the change in the position of the peak on the (200) plane of TiO2.
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