AC Back Surface Recombination Velocity as Applied to Optimize the Base Thickness under Temperature of an (n+-p-p+) Bifacial Silicon Solar Cell, Back Illuminated by a Light with Long Wavelength
The bifacial silicon solar cell, placed at temperature (T) and illuminated from the back side by
monochromatic light in frequency modulation (ω), is studied from the frequency dynamic diffusion equation,
relative to the density of excess minority carriers in the base. The
expressions of the dynamic recombination velocities of the minority carriers on
the rear side of the base Sb1(D(ω, T); H) and Sb2(α, D(ω, T); H), are analyzed as a function of the
dynamic diffusion coefficient (D(ω, T)),
the absorption coefficient (α(λ)) and the thickness of the base (H).Thus
their graphic representation makes it possible to go up, to the base optimum
thickness (Hopt(ω, T)), for different
temperature values and frequency ranges of modulation of monochromatic light,
of strong penetration. The base optimum thickness (Hopt(ω, T)) decreases with temperature,
regardless of the frequency range and allows the realization of the solar cell
with few material (Si).
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