This paper presents a newly designed ultra-thin, lead-free,
and all-inorganic solar cell structure. The structure was optimized using the SCAPS-1D
simulator, incorporating solid-state layers arranged
as n-graphene/CsSnGeI3/p-graphene. The objective was to investigate the
potential of utilizing n-graphene as the electron transport
layer and p-graphene as the hole transport layer to achieve maximum power conversion efficiency. Various materials for the
electron transport layer were evaluated. The optimized cell structure achieved a
maximum power conversion efficiency of 20.97%. The proposed solar cell structure
demonstrates promising potential as an efficient, inorganic photovoltaic device.
These findings provide important insights for developing and optimizing inorganic
photovoltaic cells based on CsSnGeI3, with n-graphene electron transport
layers and p-graphene hole transport layers.
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